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MTN2510LJ3 参数 Datasheet PDF下载

MTN2510LJ3图片预览
型号: MTN2510LJ3
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-Channel Enhancement Mode Power MOSFET]
分类和应用:
文件页数/大小: 9 页 / 323 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C741J3
Issued Date : 2009.09.21
Revised Date :2012.12.13
Page No. : 7/9
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
150°C
−Time(ts
min
to ts
max
)
60-120 seconds
Time maintained above:
−Temperature
(T
L
)
183°C
Time (t
L
)
60-150 seconds
Peak Temperature(T
P
)
240 +0/-5
°C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25
°C
to peak temperature
MTN2510LJ3
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStek Product Specification