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MTN55N03J3 参数 Datasheet PDF下载

MTN55N03J3图片预览
型号: MTN55N03J3
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-Channel Enhancement Mode Power MOSFET]
分类和应用:
文件页数/大小: 7 页 / 415 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Spec. No. : C411J3
Issued Date : 2007.07.05
Revised Date : 2009.02.04
Page No. : 2/7
Value
2.0
110
Unit
°C/W
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
-
0.037
-
30
-
-
-
4.5
7
16.8
6.0
4.9
15.1
4
45.2
7.6
2326
331
174
-
-
Max.
-
-
3.0
-
±
100
1
25
6
9
-
-
-
-
-
-
-
-
-
-
1.5
55
Unit
V
V/°C
V
S
nA
μA
μA
m
Ω
m
Ω
Test Conditions
V
GS
=0, I
D
=250μA
Reference to 25°C, I
D
=1mA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=28A
V
GS
=
±
20
V
DS
=25V, V
GS
=0
V
DS
=20V, V
GS
=0, Tj=150°C
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=30A
Static
BV
DSS
25
∆BV
DSS
/∆Tj
-
V
GS(th)
1.0
G
FS
-
I
GSS
-
I
DSS
-
I
DSS
-
*R
DS(ON)
-
*R
DS(ON)
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*V
SD
-
*I
S
-
nC
I
D
=28A, V
DS
=20V, V
GS
=5V
V
DS
=15V, I
D
=28A, V
GS
=10V,
R
G
=3.3
Ω
, R
D
=0.53
Ω
ns
pF
V
GS
=0V, V
DS
=25V, f=1MHz
V
A
I
S
=20A, V
GS
=0V
V
D
=V
G
=0, V
S
=1.5V
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Ordering Information
Device
MTN55N03J3
Package
TO-252
(RoHS compliant)
Shipping
2500 pcs / Tape & Reel
Marking
55N03
MTN55N03J3
CYStek Product Specification