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MTN5N60FP 参数 Datasheet PDF下载

MTN5N60FP图片预览
型号: MTN5N60FP
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-Channel Enhancement Mode Power MOSFET]
分类和应用:
文件页数/大小: 9 页 / 330 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Spec. No. : C408FP-A
Issued Date : 2009.04.20
Revised Date :
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @T
C
=100°C
Pulsed Drain Current @ V
GS
=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Note : 1
.
Repetitive rating; pulse width limited by maximum junction temperature.
2
.
I
AS
=4.5A, V
DD
=50V, L=6mH, V
G
=10V, starting TJ=+25
.
3
.
I
SD
≤4.5A,
dI/dt≤100A/μs, V
DD
≤BV
DSS
, starting TJ=+25
.
V
DS
V
GS
I
D
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
T
L
T
PKG
Pd
Tj, Tstg
600
±30
4.5*
2.7*
18*
58.6
4.5
3.3
4.5
300
260
33
0.26
-55~+150
V
V
A
A
A
mJ
A
mJ
V/ns
°C
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
3.79
62.5
Unit
°C/W
°C/W
MTN5N60FP
CYStek Product Specification