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MTN5N60FP 参数 Datasheet PDF下载

MTN5N60FP图片预览
型号: MTN5N60FP
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-Channel Enhancement Mode Power MOSFET]
分类和应用:
文件页数/大小: 9 页 / 330 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
BV
DSS
∆BV
DSS
/∆Tj
BV
DS
V
GS(th)
*G
FS
I
GSS
I
DSS
600
-
-
-
2.0
-
-
-
-
-
-
650
0.6
700
-
10
-
-
-
-
18.5
3.98
8.19
10.8
6.9
25.7
9.6
810
73
9
-
-
-
452
26.5
-
-
-
-
4.0
-
±
100
1
10
2.2
-
-
-
-
-
-
-
-
-
-
1.5
4.5
18
-
-
V
V
V/°C
V
V
S
nA
μA
μA
Ω
Min.
Typ.
Max.
Unit
Test Conditions
Spec. No. : C408FP-A
Issued Date : 2009.04.20
Revised Date :
Page No. : 3/9
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*V
SD
-
*I
S
-
*I
SM
-
*trr
-
*Qrr
-
V
GS
=0, I
D
=250μA, Tj=25
V
GS
=0, I
D
=250μA, Tj=150
Reference to 25°C, I
D
=250μA
V
GS
=0, I
D
=4A
V
DS
= V
GS
, I
D
=250μA
V
DS
=15V, I
D
=2.25A
V
GS
=
±
30
V
DS
=600V, V
GS
=0
V
DS
=480V, V
GS
=0, Tj=125°C
V
GS
=10V, I
D
=2.25A
nC
I
D
=4.5A, V
DD
=300V, V
GS
=10V
V
DD
=300V, I
D
=4.5A, V
GS
=10V,
R
G
=10
Ω
, R
D
=75
Ω
ns
pF
V
GS
=0V, V
DS
=25V, f=1MHz
V
A
ns
μC
I
S
=4.5A, V
GS
=0V
V
GS
=0, I
F
=4.5A, dI/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Ordering Information
Device
MTN5N60FP
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Marking
5N60
MTN5N60FP
CYStek Product Specification