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MTN75N75HE3 参数 Datasheet PDF下载

MTN75N75HE3图片预览
型号: MTN75N75HE3
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-Channel Enhancement Mode Power MOSFET]
分类和应用:
文件页数/大小: 6 页 / 507 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Spec. No. : C712E3
Issued Date : 2009.05.13
Revised Date :
Page No. : 2/6
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @T
C
=100°C
Pulsed Drain Current @ V
GS
=10V
(Note 1)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy @
L=0.5mH, I
AS
=57 A, R
G
=25Ω,V
DD
=25V
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature Range
Note : *1
.
Pulse width limited by safe operating area
V
DS
V
GS
I
D
I
D
I
DM
I
AS
E
AS
Pd
Tj, Tstg
75
±20
80
56
300
57
800
137
1.09
-55~+150
V
V
A
A
A
A
mJ
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
0.91
62.5
Unit
°C/W
°C/W
MTN75N75HE3
CYStek Product Specification