CYStech Electronics Corp.
Characteristics (T
j
=25°C, unless otherwise specified)
Symbol
Min.
Typ.
-
2.7
-
-
-
-
9.5
72
117
27
47
25
100
66
30
3457
771
170
-
-
53
143
Max.
-
4.0
±
100
1
5
-
11
-
-
-
-
-
-
-
-
-
-
-
80
1.5
-
-
Unit
V
V
nA
μA
μA
A
m
Ω
S
nC
Test Conditions
Static
BV
DSS
75
V
GS(th)
2.0
I
GSS
-
I
DSS
-
I
DSS
-
I
DON
80
R
DS(ON)
-
G
FS
-
Dynamic
Qg
-
Qgs
-
Qgd
-
t
d(ON)
-
tr
-
t
d(OFF)
-
t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
I
S
-
V
SD
-
trr
-
Qrr
-
Spec. No. : C712E3
Issued Date : 2009.05.13
Revised Date :
Page No. : 3/6
V
GS
=0, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
GS
=
±
20
V
DS
=75V, V
GS
=0
V
DS
=60V, V
GS
=0, Tj=55°C
V
DS
=10V, V
GS
=10V
(Note 1)
V
GS
=10V, I
D
=40A
(Note 1)
V
DS
=15V, I
D
=40A
(Note 1)
V
DS
=80V, I
D
=60A, V
GS
=10V
(Note 1 & 2)
ns
V
DS
=37.5V, I
D
=45A, V
GS
=10V,
R
GS
=4.7
Ω
(Note 1 & 2)
V
GS
=0V, V
DS
=25V, f=1MHz
pF
A
V
ns
nC
V
D
=V
G
=0V, V
S
=1.5V
I
S
=75A, V
GS
=0V
(Note 3)
(Note 1)
V
GS
=0, I
S
=30A, dI
F
/dt=100A/μs
Note : 1. Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
2. Independent of operating temperature
3. Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTN75N75HE3
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Marking
75N75H
MTN75N75HE3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
