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DS1225AB-200 参数 Datasheet PDF下载

DS1225AB-200图片预览
型号: DS1225AB-200
PDF下载: 下载PDF文件 查看货源
内容描述: 64K非易失SRAM [64k Nonvolatile SRAM]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 149 K
品牌: DALLAS [ DALLAS SEMICONDUCTOR ]
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DS1225AB/AD
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
-0.3V to +7.0V
0°C to 70°C; -40°C to +85°C for IND parts
-40°C to +70°C; -40°C to +85°C for IND parts
260°C for 10 seconds
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
DS1225AB Power Supply Voltage
DS1225AD Power Supply Voltage
Logic 1
Logic 0
SYMBOL
V
CC
V
CC
V
IH
V
IL
MIN
4.75
4.50
2.2
0.0
TYP
5.0
5.0
MAX
5.25
5.5
V
CC
+0.8
(T
A
: See Note 10)
UNITS
V
V
V
V
NOTES
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Input Leakage Current
I/O Leakage Current
CE > V
IH
< V
CC
Output Current @ 2.4V
Output Current @ 0.4V
Standby Current CE =2.2V
Standby Current CE =V
CC
-0.5V
Operating Current t
CYC
=200 ns
(Commercial)
Operating Current t
CYC
=200 ns
(Industrial)
Write Protection Voltage
(DS1225AB)
Write Protection Voltage
(DS1225AD)
SYMBOL
I
IL
MIN
-1.0
(V
CC
=5V ± 5% for DS1225AB)
(T
A
: See Note 10)
(V
CC
=5V ± 10% for DS1225AD)
TYP
MAX
+1.0
UNITS
µ
A
µ
A
NOTES
I
IO
I
OH
I
OL
I
CCS1
I
CCS2
I
CC01
I
CC01
V
TP
V
TP
-1.0
-1.0
2.0
5.0
3.0
+1.0
10.0
5.0
75
85
mA
mA
mA
mA
mA
mA
V
V
4.50
4.25
4.62
4.37
4.75
4.5
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN
TYP
5
5
MAX
10
10
(T
A
=25°C)
UNITS
pF
pF
NOTES
3 of 10