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DS1225Y-150 参数 Datasheet PDF下载

DS1225Y-150图片预览
型号: DS1225Y-150
PDF下载: 下载PDF文件 查看货源
内容描述: 64K非易失SRAM [64K Nonvolatile SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 8 页 / 85 K
品牌: DALLAS [ DALLAS SEMICONDUCTOR ]
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DS1225Y
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
–0.3V to +7.0V
0°C to 70°C; –40°C to +85°C for IND parts
–40°C to +70°C; –40°C to +85°C for IND parts
260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Power Supply Voltage
Input Logic 1
Input Logic 0
SYM
V
CC
V
IH
V
IL
MIN
4.5
2.2
0.0
TYP
5.0
MAX
5.5
V
CC
+0.8
(t
A
: See Note 10)
UNITS
V
V
V
NOTES
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Input Leakage Current
I/O Leakage Current
CE > V
IH
< V
CC
Output Current @ 2.4V
Output Current @ 0.4V
Standby Current CE = 2.2V
Standby Current CE = V
CC
–0.5V
Operating Current t
CYC
=200 ns
(Commercial)
Operating Current t
CYC
=200 ns
(Industrial)
Write Protection Voltage
SYMBOL
I
IL
I
IO
I
OH
I
OL
I
CCS1
I
CCS2
I
CCO1
I
CCO1
V
TP
4.25
MIN
–1.0
–1.0
–1.0
2.0
5
3
TYP
(t
A
: See Note 10; V
CC
= 5V
±
10%)
MAX
+1.0
+1.0
UNITS
µA
µA
mA
mA
10
5
75
85
mA
mA
mA
mA
V
10
NOTES
021998 3/8