P-Channel 30-V (D-S) MOSFET
www.din-tek.jp
DTC3059
PRODUCT SUMMARY
V
DS
(V)
- 30
R
DS(on)
(Ω)
0.060 at V
GS
= - 10 V
0.075 at V
GS
= - 4.5 V
I
D
(A)
7.6
a
6
a
Q
g
(Typ.)
2 nC
FEATURES
•
Halogen-free
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
RoHS
COMPLIANT
APPLICATIONS
S
D
G
• DC/DC Converter
- Load Switch
- Adaptor Switch
D
G
D
S
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
- 30
± 20
- 7.6
a
- 5.8
- 6
a, b, c
- 5.2
b, c
- 20
- 5.3
- 2.1
b, c
6.3
3.3
2.5
b, c
1.3
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
40
15
Maximum
50
20
Unit
°C/W
1