TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.05
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DTC3059
I
D
= 7.2 A
R
DS(on)
- On-Resistance (Ω)
0.04
T
J
= 125 °C
0.03
T
J
= 25 °C
0.02
I
S
- Source Current (A)
10
T
J
= 150 °C
1
T
J
= 25 °C
0.01
0.1
0.0
0.3
0.6
0.9
1.2
0.00
0
4
8
12
16
20
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Forward Diode Voltage vs. Temp.
2.4
50
On-Resistance vs. Gate-to-Source Voltage
2.2
40
2.0
Power (W)
150
V
GS(th)
(V)
30
1.8
I
D
= 250
µA
20
1.6
10
1.4
1.2
- 50
- 25
0
25
50
75
100
125
0
0.001
0.01
0.1
Time (s)
1
10
100
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
100
µs
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
1s
10 s
DC
Single Pulse Power
0.1
T
A
= 25 °C
Single Pulse
BVDSS
Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
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