TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.030
I
D
= 15 A
R
DS(on)
- On-Resistance (Ω)
www.din-tek.jp
DTM4459
10
I
S
- Source Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.024
0.018
0.1
0.012
T
J
= 125 °C
0.006
T
J
= 25 °C
0.01
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.8
200
On-Resistance vs. Gate-to-Source Voltage
0.6
V
GS(th)
Variance
(V)
I
D
= 250
µA
160
0.4
Power (W)
150
120
I
D
= 5 mA
0.2
80
0.0
40
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0 .0 0 1
0.01
T
J
- Temperature (°C)
0.1
Time (s)
1
10
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
BVDSS
10 s
DC
100
0.1
1
10
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
4
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