DT
www.daysemi.jp
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 5 thru 3 V
25
I
D
- Drain Current (A)
2.5 V
I
D
- Drain Current (A)
25
30
20
20
15
15
10
2V
10
T
C
= 125 °C
5
25 °C
- 55 °C
5
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.06
5
Transfer Characteristics
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance (Ω)
0.05
4
V
DS
= 10 V
I
D
= 6.5 A
0.04
3
0.03
V
GS
= 2.5 V
0.02
V
GS
= 4.5 V
2
1
0.01
0
5
10
15
20
25
30
I
D
- Drain Current (A)
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Drain Current
1.6
V
GS
= 4.5 V
I
D
= 6.5 A
10
I
S
- Source Current (A)
40
Gate Charge
1.4
R
DS(on)
- On-Resistance
(Normalized)
1.2
T
J
= 150 °C
T
J
= 25 °C
1
1.0
0.8
0.6
- 50
0.1
- 25
0
25
50
75
100
125
150
0
0.3
0.6
0.9
1.2
1.5
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3