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SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 4.5 V
V
GS
= 4.5 V
V
GS
= 4.5 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5V
V
GS
= 2.5 V
V
GS
= 1.5 V
Forward
Transconductance
b
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
Time
c
t
d(off)
t
f
I
SM
V
SD
I
F
= 5 A, V
GS
= 0 V
V
DD
= 10 V, R
L
= 2.5
I
D
4 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
V
GS
= 4.5 V
V
DS
= 10 V, I
D
= 5 A
V
GS
= 0 V
V
DS
= 10 V, f = 1 MHz
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay
Fall Time
c
Pulsed Current
a
Forward Voltage
-
-
-
-
-
-
6
-
-
-
-
-
-
387
80
37
4.5
0.4
0.7
12
7
8
21
9
-
0.75
485
100
46
8.5
-
-
18
11
12
32
14
24
1.2
A
V
ns
nC
pF
V
DS
= 20 V
V
DS
= 20 V, T
J
= 125 °C
V
DS
= 20 V, T
J
= 175 °C
V
DS
5
V
I
D
= 5 A
I
D
= 5 A, T
J
= 125 °C
I
D
= 5 A, T
J
= 175 °C
I
D
= 4 A
I
D
= 2 A
20
0.4
-
-
-
-
10
-
-
-
-
-
-
-
0.6
-
-
-
-
-
0.018
-
-
0.027
0.034
27
-
1
± 100
1
50
150
-
0.024
0.045
0.054
0.033
0.042
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DTS2300A
V
DS
= 15 V, I
D
= 5 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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