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DTS2300S_13 参数 Datasheet PDF下载

DTS2300S_13图片预览
型号: DTS2300S_13
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道20 V ( DS ) MOSFET TrenchFET功率MOSFET [N-Channel 20 V (D-S) MOSFET TrenchFET Power MOSFET]
分类和应用:
文件页数/大小: 7 页 / 780 K
品牌: DINTEK [ DinTek Semiconductor Co,.Ltd ]
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TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.0
0.07
www.din-tek.jp
DTS2300S
R
DS(on)
- On-Resistance (Ω)
1.6
I
D
- Drain Current (A)
0.06
V
GS
= 2.5
V
1.2
0.05
V
GS
= 4.5
V
0.8
T
C
= 25 °C
0.4
T
C
= 125 °C
0.0
0.0
T
C
= - 55 °C
0.3
0.6
0.9
1.2
1.5
0.04
0.03
0
2
4
6
I
D
- Drain Current (A)
8
10
V
GS
- Gate-to-Source
Voltage
(V)
Transfer Characteristics
400
C
iss
320
C - Capacitance (pF)
5
On-Resistance vs. Drain Current
I
D
= 3.6 A
V
GS
- Gate-to-Source
Voltage
(V)
4
V
DS
= 10
V
V
DS
= 5
V
3
V
DS
= 15
V
2
240
160
C
oss
80
C
rss
0
0
5
10
15
20
V
DS
- Drain-to-Source
Voltage
(V)
1
0
0
1
2
3
4
Q
g
- Total Gate Charge (nC)
Capacitance
1.6
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 2.5
V,
I
D
= 3.1 A
1.4
I
S
- Source Current (A)
10
100
Gate Charge
T
J
= 150 °C
1
1.2
V
GS
= 4.5
V,
I
D
= 3.6 A
1.0
0.1
T
J
= 25 °C
0.8
0.01
T
J
= - 55 °C
0.6
- 50
- 25
0
25
50
75
100
125
150
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3