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DTS2300S_13 参数 Datasheet PDF下载

DTS2300S_13图片预览
型号: DTS2300S_13
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道20 V ( DS ) MOSFET TrenchFET功率MOSFET [N-Channel 20 V (D-S) MOSFET TrenchFET Power MOSFET]
分类和应用:
文件页数/大小: 7 页 / 780 K
品牌: DINTEK [ DinTek Semiconductor Co,.Ltd ]
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TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.12
0.2
www.din-tek.jp
DTS2300S
R
DS(on)
- On-Resistance (Ω)
0.1
0.10
V
GS(th)
Variance
(V)
0.0
0.08
T
J
= 125 °C
- 0.1
I
D
= 1 mA
- 0.2
I
D
= 250
µA
0.06
T
J
= 25 °C
0.04
0
1
2
3
4
V
GS
- Gate-to-Source
Voltage
(V)
5
- 0.3
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
10
5
Limited
by
R
DS(on)*
Threshold Voltage
100
µs
8
1 ms
I
D
- Drain Current (A)
1
10 ms
Power (W)
6
4
100 ms
0.1
T
A
= 25 °C
Single Pulse
1s
10 s
100 s, DC
BVDSS Limited
2
T
A
= 25 °C
0
0.01
0.01
0.1
0.1
1
Time (s)
10
100
1000
Single Pulse Power
1
Duty Cycle = 0.5
Normalized
Effective Transient
Thermal Impedance
100
1
10
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
Notes:
2. Per Unit Base = R
thJA
= 70 °C/W
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square
Wave
Pulse Duration (s)
10
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
.
4