New Product
DTS4500
www.daysemi.jp
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 10 V thru 4 V
4
15
I
D
- Drain Current (A)
I
D
- Drain Current (A)
5
T
C
= - 55 °C
3
10
V
GS
= 3 V
2
T
C
= 25 °C
1
T
C
= 125 °C
5
0
0.0
0.5
1.0
1.5
2.0
0
0.0
0.6
1.2
1.8
2.4
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.06
450
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
360
0.05
V
GS
= 4.5 V
0.04
V
GS
= 10 V
C - Capacitance (pF)
C
iss
270
180
C
oss
90
C
rss
0.03
0.02
0
5
10
I
D
- Drain Current (A)
0
15
20
0
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 4.3 A
V
GS
- Gate-to-Source Voltage (V)
Capacitance
1.65
V
DS
= 20 V
1.45
V
DS
= 10 V
R
DS(on)
- On-Resistance
8
V
GS
= 10 V; I
D
= 4.3 A
(Normalized)
6
V
DS
= 32 V
4
1.25
V
GS
= 4.5 V; I
D
= 3.9 A
1.05
2
0.85
0
0
1
2
3
4
5
6
0.65
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67030
S10-2250-Rev. A, 04-Oct-10
www.daysemi.jp
3
DINTEK [ DinTek Semiconductor Co,.Ltd ]
