I
D
(ON), DRAIN SOURCE ON CURRENT (A)
1
1
7V
T
A
= 25°C
P
d
, POWER DISSIPATION (W)
0.8
(See Note 1)
0.8
V
GS
= 6V
0.6
0.6
Pulse test width 80µs;
pulse duty factor 1%
5V
0.4
0.4
0.2
0.2
4V
3V
0
0
100
T
A
, AMBIENT TEMPERATURE (ºC)
Fig. 1. Power Derating Curve
200
0.1
0
20
40
60
80
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 2. Output Characteristics
I
D
(ON), DRAIN SOURCE ON-CURRENT (mA)
500
T
A
= 25°C
V
GS
= 5V
1.0
V
DS
= 10V
T
A
= 25°C
400
I
D,
DRAIN CURRENT (A)
Pulse test width 80µs;
pulse duty factor 1%
0.8
Pulse test width 80µs;
pulse duty factor 1%
300
4.5V
0.6
200
4.0V
0.4
100
3.5V
0.2
3.0V
0
0
2
4
6
8
10
0
0
2
4
6
8
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 3. Saturation Characteristics
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 4. Drain Current vs Gate-Source Voltage
g
fs
, FORWARD TRANSCONDUCTANCE (mm)
g
f s
, FORWARD TRANSCONDUCTANCE (m
m
)
500
V
DS
= 10V
500
V
DS
= 10V
400
Pulse test width 80µs;
pulse duty factor 1%
400
Pulse test width 80µs;
pulse duty factor 1%
300
300
200
200
100
100
0
0
2
4
6
8
10
0
0
100
200
300
400
500
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 5. Transconductance vs Gate-Source Voltage
I
D
, DRAIN CURRENT (mA)
Fig. 6 Transconductance vs. Drain Current
DS21802 Rev. D-3
2 of 2
BS170
DIODES [ DIODES INCORPORATED ]
