TM
DOMINANT
GaN : DDx-KJS-I1
Semiconductors
Innovating Illumination
Absolute Maximum Ratings
Maximum Value
Unit
DC forward current
20
mA
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage (IR = 10 µA)
ESD threshold (HBM)
200
5
mA
V
2000
V
LED junction temperature
Operating temperature
125
˚C
˚C
˚C
mW
-40 … +100
-40 … +100
85
Storage temperature
Power dissipation (at room temperature)
Thermal resistance
- Junction / ambient, R
500
280
K/W
K/W
th JA
- Junction / solder point, R
th JS
2
(Mounting on FR4 PCB, pad size >= 16 mm per pad)
Characteristics (Ta = 25˚C)
Symbol
Part Number
Value
Unit
Odom (typ)
= 10mA; 0 ˚C <= T <= 100 ˚C
Temperature coefficient of
TC
DDB-KJS
0.01
nm / K
O
dom (typ)
I
F
Temperature coefficient of V
F (typ)
-2.60
-0.30
mV / K
TC
DDB-KJS
DDB-KJS
V
I
= 10mA; 0 ˚C <= T <= 100 ˚C
F
Temperature coefficient of I
V (typ)
TC
mcd / K
IV
I
= 10mA; 0 ˚C <= T <= 100 ˚C
F
27/06/2007 V(O)
3
DOMINANT [ DOMINANT SEMICONDUCTORS ]
