TM
DOMINANT
GaN : DDx-KJS-I1
Semiconductors
Innovating Illumination
Relative Luminous Intensity Vs Forward Current
Forward Current Vs Forward Voltage
2.2
2
35
30
25
20
15
10
5
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
0
5
10
15
20
25
30
35
3
3.5
4
4.5
5
Forward Current, mA
Forward Voltage, V
Maximum Forward Current Vs Temperature
Relative Intensity Vs Wavelength
25
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
20
15
10
5
0
0
10 20 30 40 50 60 70 80 90 100
350
400
450
500
550
600
650
Ambient Temperature
Wavelength, nm
Allowable Forward Current Vs Duty Ratio
Allowable Forward Current Vs Duty Ratio
Radiation Pattern
10° 0°
1.0
(Ta=25 Deg C, Tp<10us)
30°
20°
1000
40°
0.8
100
10
1
0.6
0.4
0.2
50°
60°
70°
80°
90°
0
1
10
100
Duty Ratio, %
27/06/2007 V(O)
4
DOMINANT [ DOMINANT SEMICONDUCTORS ]
