DIM200PHM33-F000
TYPICAL CHARACTERISTICS
400
400
Common emitter
T
case
= 25˚C
V
ce
is measured at power
busbars and not the
auxiliary terminals
Common emitter
T
case
= 125˚C
V
ce
is measured at power
busbars and not the
auxiliary terminals
300
300
Collector current, I
c
- (A)
200
100
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
6.0
Collector current, I
c
- (A)
200
100
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V
ce
- (V)
7.0
8.0
0
0.0
Fig. 3 Typical output characteristics
400
Fig. 4 Typical output characteristics
1400
Conditions:
T
c
= 125˚C,
I
C
= 200A,
1200 V
cc
= 1800V,
C
ge
= 56nF,
V
ge
= ±15V
1000
Switching energy, E
sw
- (mJ)
Conditions:
T
c
= 125˚C,
R
g(on)
= 7.5 Ohms,
R
g(off)
= 16.5 Ohms
C
ge
= 56nF,
V
cc
= 1800V,
300 V = ±15V
ge
Switching energy, E
sw
- (mJ)
800
E
on
(mJ)
E
off
(mJ)
E
rec
(mJ)
200
600
400
100
E
on
(mJ)
E
off
(mJ)
E
rec
(mJ)
0
0
20
40
60
80
100
120
140
160
180
200
200
0
0
8
Collector current, I
C
- (A)
16
24
32
40
Gate resistance, R
g
- (ohms)
48
56
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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