DIM200WKS17-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25˚C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
Partial discharge - per module
T
case
= 65˚C
1ms, T
case
= 110˚C
T
case
= 25˚C, T
j
= 150˚C
V
R
= 0, t
p
= 10ms, T
vj
= 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1800V, V
2
= 1300V, 50Hz RMS
V
GE
= 0V
-
Test Conditions
Max.
1700
±20
200
400
1390
7.5
4000
10
Units
V
V
A
A
W
kA
2
s
V
PC
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al
2
O
3
Baseplate material: Cu
Creepage distance: 24mm
Symbol
R
th(j-c)
Parameter
Thermal resistance - transistor (per arm)
Clearance: 13mm
CTI (Critical Tracking Index): 175
Test Conditions
Continuous dissipation -
junction to case
Min.
-
Typ.
-
Max.
90
Units
˚C/kW
R
th(j-c)
Thermal resistance - diode (per arm)
(Antiparallel and freewheel diode)
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
-
200
˚C/kW
R
th(c-h)
Thermal resistance - case to heatsink
(per module)
-
-
15
˚C/kW
T
j
Junction temperature
-
-
-
–40
3
2.5
-
-
-
-
-
150
125
125
5
5
˚C
˚C
˚C
Nm
Nm
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M6
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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