DIM200WKS17-A000
400
350
450
V
F
is measured at power busbars
and not the auxiliary terminals
400
T
j
= 25˚C
350
Collector current, I
C
- (A)
Chip
300
Foward current, I
F
- (A)
300
Module
250
200
150
100
Conditions:
= 125˚C
T
50
case
V
ge
= 15V
R
g(off)
= 4.7ohms
0
0
200 400 600
250
T
j
= 125˚C
200
150
100
50
0
0
0.5
2.0
1.0
1.5
2.5
Foward voltage, V
F
- (V)
3.0
3.5
800 1000 1200 1400 1600 1800
Collector emitter voltage, V
ce
- (V)
Fig. 7 Diode typical forward characteristics
1000
400
350
Fig. 8 Reverse bias safe operating area
Transient thermal impedance, Z
th (j-c)
- (°C/kW )
Diode
Reverse recovery current, I
rr
- (A)
300
250
200
150
100
50
T
j
= 125˚C
0
0
400
1200
800
Reverse voltage, V
R
- (V)
1600
2000
100
Transistor
10
IGBT
Diode
1
0.001
R
i
(˚C/KW)
τ
i
(ms)
R
i
(˚C/KW)
τ
i
(ms)
0.01
1
2.10
0.11
4.49
0.01
2
11.62
3.14
25.28
3.21
3
43.85
45.60
74.24
38.58
1
4
29.53
143.02
90.09
113.97
10
0.1
Pulse width, t
p
- (s)
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
6/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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