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DS1112SG 参数 Datasheet PDF下载

DS1112SG图片预览
型号: DS1112SG
PDF下载: 下载PDF文件 查看货源
内容描述: 整流器器二极管 [Rectifier Diode]
分类和应用: 二极管
文件页数/大小: 7 页 / 98 K
品牌: DYNEX [ Dynex Semiconductor ]
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DS1112SG
CHARACTERISTICS
Symbol
V
FM
I
RM
Q
S
I
rr
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Total stored charge
Reverse recovery current
Threshold voltage
Slope resistance
Conditions
At 1800A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 150
o
C
I
F
= 1000A, dI
RR
/dt = 3A/µs
T
case
= 150˚C, V
R
= 100V
At T
vj
= 150˚C
At T
vj
= 150˚C
Min.
-
-
-
-
-
-
Max.
2.1
75
3000
90
0.9
0.93
Units
V
mA
µC
A
V
mΩ
CURVES
2500
2500
Measured under pulse
conditions
dc
Half wave
Instantaneous forward current, I
F
- (A)
2000
Mean power dissipation - (W)
2000
3 phase
1500
T
j
= 25˚C
T
j
= 150˚C
1000
1500
1000
500
500
0
0.5
1.5
2.5
Instantaneous forward voltage, V
F
- (V)
3.5
0
0
500
1000
1500
2000
Mean forward current, I
F(AV)
- (A)
Fig.2 Maximum (limit) forward characteristics
V
FM
Equation:-
V
FM
= A + Bln (I
F
) + C.I
F
+D.√I
F
Where
Fig.3 Dissipation curves
A = 1.249986
B = –0.17646
C = 0.000524
D = 0.041024
these values are valid for T
j
= 125˚C for I
F
500A to 2500A
4/7
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