DS1112SG
10000
Conditions:
T
j
= 150˚C
V
R
= 100V
I
F
= 1000A
Peak half sine forward current - (kA)
35
400
I
2
t
30
=
Î
2
xt
2
350
25
I
2
t
20
300
I
2
t value - (A
2
s x 10
3
)
Stored charge, Q
S
- (µC)
250
1000
15
200
10
150
I
F
Q
S
dI
F
/dt
5
100
100
0.1
I
RM
1.0
10
Rate of decay of forward current, dI
F
/dt - (A/µs)
100
0
1
ms
10
1
2 3
5
10
20
50
50
Cycles at 50Hz
Duration
Fig.4 Total stored charge
0.1
Anode side cooled
Thermal Impedance - junction to case, R
th(j–c)
- (˚C/W)
Fig.5 Surge (non-repetitive) forward current vs time (with
50% V
RRM
at T
case
125˚C)
Double side cooled
0.01
Conduction
Effective thermal resistance
Junction to case ˚C/W
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.001
0.001
0.01
0.1
Time - (s)
1.0
10
Fig.6 Maximum (limit) transient thermal impedance -
junction to case
5/7
www.dynexsemi.com
DYNEX [ Dynex Semiconductor ]
