DS2107SY
100000
I
F
Q
S
dI
F
/dt
I
RM
1000
Conditions:
T
j
= 150˚C
V
R
= 100V
I
F
= 2000A
Reverse recovery current, I
rr
- (A)
Conditions:
T
j
= 150˚C
V
R
= 100V
I
F
= 2000A
Stored charge, Q
S
- (µC)
10000
100
1000
0.1
1.0
10
Rate of decay of forward current, dI
F
/dt - (A/µs)
100
10
0.1
1.0
10
Rate of decay of forward current, dI
F
/dt - (A/µs)
100
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
120
I
2
t
=
Î
2
xt
2
0.1
100
Peak half sine forward current - (kA)
Anode side cooled
80
10
Thermal impedance - (˚C/W)
0.01
Double side cooled
I
2
t value - (A
2
s x 10
6
)
60
8
I
2
t
40
6
0.001
Conduction
20
4
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0095
0.0105
0.0112
0.0139
Single side
0.019
0.020
0.0207
0.0234
0
1
ms
10
1
2 3
5
10
20
2
50
0.0001
0.001
0.01
Cycles at 50Hz
Duration
0.1
1
Time - (s)
10
100
Fig.6 Surge (non-repetitive) forward current vs time
(with 50% V
RRM
at T
case
150˚C)
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
5/7
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