MF35
SURGE RATINGS
Symbol
I
FSM
I
2
t
Parameter
Surge (non-repetitive) forward current
I
2
t for fusing
Conditions
10ms half sine; with V
RRM
≤
10V, T
j
= 125
o
C
10ms half sine; T
j
= 125
o
C
Max.
400
800
Units
A
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
dc
Mounting torque 3.5Nm
with mounting compound
Forward (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Mounting torque
-
-55
3.2
125
125
3.8
o
Conditions
Min.
-
-
-
Max.
0.8
0.2
125
Units
o
C/W
o
C/W
o
C
C
˚C
Nm
CHARACTERISTICS
Symbol
V
FM
I
RM
t
rr
Q
R
V
TO
r
T
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge
Threshold voltage
Slope resistance
Parameter
Conditions
At 120A peak, T
case
= 25 C
At V
RRM
, T
case
= 100
o
C
I
F
= 1A, di
RR/
dt = 25A/µs, T
case
= 25˚C,
V
R
= 100V
I
F
= 50A, di
RR/
dt = 50A/µs, T
case
= 25˚C,
V
R
= 100V
At T
vj
= 125 C
At T
vj
= 125 C
o
o
o
Typ.
-
-
-
-
-
-
Max.
2.0
5
200
10
1.2
7.0
Units
V
mA
ns
µC
V
mΩ
2/8
DYNEX [ Dynex Semiconductor ]
