MP03 XXX 330 Series
SURGE RATINGS - PER ARM
Symbol
Parameter
Conditions
Max.
Units
I
TSM
Surge (non-repetitive) on-state current
V =0
10ms half sine;
R
T
j
= 130˚C
V
R
= 50% V
RRM
10ms half sine;
T
j
= 130˚C
V
R
= 0
V
R
= 50% V
RRM
10.6
8.5
0.56 x 10
6
0.36 x 10
6
A
kA
A
2
s
A
2
s
I
2
t
I
2
t for fusing
THERMAL & MECHANICAL RATINGS
Symbol
Parameter
Conditions
Max.
Units
o
dc
R
th(j-c)
Thermal resistance - junction to case
per Thyristor or Diode
halfwave
3 phase
R
th(c-hs)
T
vj
T
stg
V
isol
Thermal resistance - case to heatsink
per thyristor or diode
Virtual junction temperature
Storage temperature range
Isolation voltage
Commoned terminals to base plate
AC RMS, 1min, 50Hz
Mounting torque = 5Nm
with mounting compound
Off-state (Blocking)
0.11
0.12
0.13
0.05
130
-40 to 130
2.5
C/W
o
C/W
C/W
C/W
o
o
o
C
o
C
kV
DYNAMIC CHARACTERISTICS- THYRISTOR
Symbol
Parameter
Conditions
Max.
Units
V
TM
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
On-state voltage
Peak reverse and off-state current
Linear rate of rise of off-state voltage
At 1000A, T
case
= 25
o
C
At V
RRM
/V
DRM
, T
j
= 130
o
C
To 67% V
DRM
T
j
= 130
o
C
From 67% V
DRM
to 600A
Gate source 10V, 5Ω
Rise time 0.5µs, T
j
=130
o
C
At T
vj
= 130
o
C
At T
vj
= 130
o
C
1.50
30
200*
V
mA
V/µs
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
100
0.8
0.7
A/µs
V
mΩ
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
2/10
DYNEX [ Dynex Semiconductor ]
