EL2004/EL2004C
350 MHz FET Buffer
g
S
15V AC Electrical Characteristics
e
e
e
e
g
V
15V, R
1 kX, R
50X, T
25 C unless otherwise specified Ð Contd.
§
L
S
J
EL2004
EL2004C
Min Typ Max
2000 2500
Parameter
Description
Test Conditions
Min Typ Max
Units
Test
Test
Level
Level
e
g
SR
Slew Rate
V
5V (Note 5)
2000 2500
1200
I
I
V/ms
V/ms
IN
e
(Note 5)
e
g
5V
C
L
100 pF, V
IN
V
1200
V
t
r
Rise Time
DV P 0.6V
IN
1.0
1.7
1.7
2.5
I
I
1.0
1.7
1.7
2.5
I
I
ns
ns
Note: See Test Figure
e
L
DV P 0.6V, R
IN
50X
t
Propagation Delay
p
DV P 0.6V
IN
1.0
4
2.0
I
1.0
4
2.0
I
ns
X
Note: See Test Figure
e
e
1 V
RMS
R
Output
f
1 MHz, V
IN
OUT
V
V
V
V
V
V
e
100X to Infinity
Impedance
DR
L
a
b
a e
1 kHz
g
PSRR
PSRR
Power Supply
DV
1.5 V
S
peak
peak
40
40
40
40
dB
dB
e
Rejection Ratio
f
b e
DV
S
g
Power Supply
1.5 V
e
Rejection Ratio
f
1 kHz
g
V
S
5V AC Electrical Characteristics
e
e
e
e
50X, T
J
g
5V, R
50X, R
25 C unless otherwise specified
§
L
S
EL2004
EL2004C
Parameter
Description
Test Conditions
Units
Test
Test
Min Typ Max
Min Typ Max
Level
Level
e
BW
Bandwidth
R
1 kX
175 220
I
IV
V
V
I
175 220
I
IV
V
V
I
MHz
MHz
ns
L
(Note 4)
125 150
125 150
e
e
3 ns
t
Settling Time to 1%
Input Capacitance
Slew Rate
DV
IN
1V, t
8
3
8
3
s
r
C
pF
in
e
g
SR
V
2V (Note 6)
900 1200
900 1200
V/ms
IN
e
e
e
g
2V
C
100 pF, V
IN
L
500
V
500
V
V/ms
R
R
R
R
1 kX (Note 6)
L
L
L
L
e
e
e
t
r
Rise Time
1 kX, DV P 0.6V
IN
1.6
2.3
2.0
2.8
I
1.6
2.3
2.0
2.8
I
ns
ns
Note: See Test Figure
50X, DV P 0.6V
IN
IV
IV
t
Propagation Delay
1 kX, DV P 0.6V
IN
p
1.2
4
2.4
I
1.2
4
2.4
I
ns
X
Note: See Test Figure
e
e
R
Output
f
1 MHz, V
IN
1 V
RMS
OUT
V
V
V
V
V
V
e
100X to Infinity
Impedance
DR
L
a
b
b e
1 kHz
g
PSRR
PSRR
Power Supply
DV
0.5 V
S
peak
peak
30
30
30
30
dB
dB
e
Rejection Ratio
f
a e
DV
S
g
Power Supply
0.5 V
e
Rejection Ratio
f
1 kHz
4
ELANTEC [ ELANTEC SEMICONDUCTOR ]
