Output Characteristics
50
45
V
GS
=10thru 4V
40
Transfer Characteristics
40
35
30
I
D
- Drain Current(A)
I
D
- Drain Current(A)
35
30
25
20
15
10
5
0
0
1
2
3
4
5
3V
25
20
15
T
C
=125° C
10
5
0
0.0
25° C
-55° C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage(V)
V
GS
- Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current
0.015
Capacitance
2500
f = 1 MHz
V
GS
=0V
Ciss
r
DS(on)
- On-Resistance( )
0.012
V
GS
=4.5V
0.009
V
GS
=10V
0.006
C- Capacitance(pF)
2000
1500
1000
Coss
500
Crss
0.003
0.000
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
- Drain Current(A)
V
DS
- Drain-to-Source Voltage(V)
Gate Charge
10
On-Resistance vs. Junction Temperature
2.00
V
GS
=10V
I
D
=15A
V
GS
- Gate-to-Source Voltage(V)
r
DS(on)
- On-Resistance( )
(Normalized)
8
12
16
20
24
V
DS
=10V
I
D
=15A
8
1.75
1.50
1.25
1.00
0.75
0.50
-50
6
4
2
0
0
4
-25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge(nC)
T
J
- Junction Temperature(° C)
ELM-TECH [ ELM Technology Corporation ]
