Source-Drain Diode Forward Voltage
60
On-Resistance vs.Gate-to-Source Voltage
0.040
)
0.032
I
S
- Source Current(A)
T
J
=150° C
10
r
DS(ON)
- On-Resistance(
0.024
0.016
I
D
=15A
0.008
T
J
=25° C
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage(V)
V
GS
- Gate-to-Source Voltage(V)
Threshold Voltage
0.4
0.2
I
D
= 250
A
40
50
Single Pulse Power
V
GS(th)
Variance(V)
0.0
Power(W)
30
T
A
=25° C
20
-0.2
-0.4
-0.6
-0.8
-50
10
-25
0
25
50
75
100
125 150
0
10
-2
10
-1
1
10
T
J
- Temperature(° C)
Time(sec)
Safe Operating Area, Junction-to Ambient
100
Limited by r
DS(on)
10
100
s,10
s
I
D
- Drain Current(A)
1ms
1
10ms
100ms
0.1
T
A
=25°C
Single Pulse
1s
10s
dc,100s
0.01
0.1
10
100
1
V
DS
- Drain-to-Source Voltage(V)
ELM-TECH [ ELM Technology Corporation ]
