Single N-channel MOSFET
ELM34416AA-N
■General description
ELM34416AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
•
•
•
•
Vds=30V
Id=11A
Rds(on) < 12.0mΩ (Vgs=10V)
Rds(on) < 17.5mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
Power dissipation
L=0.1mH
Ta=25°C
Ta=100°C
Symbol
Vds
Vgs
Id
Idm
Las
Eas
Pd
Tj, Tstg
Limit
30
±
20
Unit
V
V
A
A
A
mJ
W
°C
Note
11
7
40
28
40
2.5
1.0
-55 to 150
3
Ta=25°C
Ta=100°C
Operating junction and storage temperature range
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Steady-state
Steady-state
Symbol
Rθjc
Rθja
Typ.
Max.
25
50
Unit
°C/W
Note
■Pin configuration
SOP-8(TOP VIEW)
1
2
3
4
■Circuit
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
G
S
D
8
7
6
5
4-1
ELM-TECH [ ELM Technology Corporation ]
