Single N-channel MOSFET
ELM34416AA-N
■Electrical characteristics
Ta=25°C
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
30
V
Vds=24V, Vgs=0V
Idss
1
Zero gate voltage drain current
μA
Vds=20V, Vgs=0V, Tj=125°C
10
±
±
Gate-body leakage current
Gate threshold voltage
On-state drain current
Igss Vds=0V, Vgs= 20V
100 nA
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vds=10V, Vgs=10V
1.5
40
1.8
2.5
V
A
1
1
Vgs=10V, Id=11A
Rds(on)
8.5 12.0 mΩ
14.0 17.5 mΩ
Static drain-source on-resistance
Vgs=4.5V, Id=11A
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Gfs Vds=5V, Id=11A
Vsd If=25A, Vgs=0V
Is
40
S
V
A
1
1
1.3
1.9
Ciss
846
225
126
1.65
pF
pF
pF
Ω
Output capacitance
Coss Vgs=0V, Vds=12V, f=1MHz
Crss
Reverse transfer capacitance
Gate resistance
Rg Vgs=0V, f=1MHz
SWITCHING PARAMETERS
Total gate charge(Vgs=10V)
Total gate charge(Vgs=4.5V)
Gate-source charge
17.0
8.1
2.7
4.0
9
nC
nC
nC
nC
ns
2
2
2
2
2
2
2
2
Qg
Vds=15V, Id=8.8A
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Turn-on rise time
tr
td(off)
tf
30
20
6
ns
Vgs=10V, Vds=15V,
Id≈12.5A, Rgen=6Ω
Turn-off delay time
ns
Turn-off fall time
ns
Body diode reverse recovery time
Body diode reverse recovery charge
trr If=11A, dl/dt=100A/μs
Qrr
21
10
ns
nC
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%;
2. Independent of operating temperature;
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4 - 2
ELM-TECH [ ELM Technology Corporation ]
