Dual P-channel MOSFET
ELM54801AA-N
■General description
ELM54801AA-N uses advanced trench technology to
provide excellent Rds(on) and low gate charge.
■Features
•
•
•
•
•
Vds=-30V
Id=-5A (Vgs=-10V)
Rds(on) < 48mΩ (Vgs=-10V)
Rds(on) < 57mΩ (Vgs=-4.5V)
Rds(on) < 80mΩ (Vgs=-2.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
Power dissipation
Junction and storage temperature range
L=0.1mH
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Ias, Iar
Eas, Ear
Pd
Tj, Tstg
Limit
-30
±
12
-5
-4
-28
17
14
2.0
1.3
-55 to 150
Unit
V
V
A
A
A
mJ
W
°C
3
3
3
2
Note
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
Typ.
48.0
74.0
32.0
Max.
62.5
90.0
40.0
Unit
°C/W
°C/W
°C/W
Note
1
1, 4
■Pin configuration
SOP-8(TOP VIEW)
1
2
3
4
■Circuit
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE2
GATE2
SOURCE1
GATE1
DRAIN1
DRAIN1
DRAIN2
DRAIN2
G1
S1
D1
D2
8
7
6
5
G2
S2
5- 1
ELM-TECH [ ELM Technology Corporation ]
