Dual P-channel MOSFET
ELM54801AA-N
1200
1000
800
5
4
3
2
1
0
VDS=-15V
ID=-5A
Ciss
600
400
Coss
Crss
200
0
0
3
6
9
12
0
5
10
15
20
25
30
Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
10000
1000
100
10
TJ(Max)=150°C
TA=25°C
10
100
1ms
µ
s
RDS(ON)
limited
µ
s
10ms
TJ(Max)=150°C
TA=25°C
1s
10s
DC
0.1
1
0.0
0.00001
0.001
0.1
10
1000
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
PD
Ton
T
Single Pulse
0.001 0.01
0.01
0.00001
0.0001
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
5 - 4
ELM-TECH [ ELM Technology Corporation ]
