EBE11UD8AGWA
Parameter
Symbol
Grade
max.
Unit
Test condition
Self Refresh Mode;
CK and /CK at 0V;
CKE
≤
0.2V;
Other control and address bus inputs are FLOATING;
Data bus inputs are FLOATING
all bank interleaving reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = tRCD (IDD)
−1
×
tCK (IDD);
tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD(IDD),
tRCD = 1
×
tCK (IDD);
CKE is H, CS is H between valid commands;
Address bus inputs are STABLE during DESELECTs;
Data pattern is same as IDD4W;
Self-refresh current
IDD6
96
mA
Operating current
IDD7
(Bank interleaving)
(Another rank is in IDD2P)
Operating current
IDD7
(Bank interleaving)
(Another rank is in IDD3N)
-6E
-5C
-6E
-5C
2640
2640
3120
3080
mA
mA
Notes: 1.
2.
3.
4.
IDD specifications are tested after the device is properly initialized.
Input slew rate is specified by AC Input Test Condition.
IDD parameters are specified with ODT disabled.
Data bus consists of DQ, DM, DQS, /DQS, RDQS, /RDQS, LDQS, /LDQS, UDQS, and /UDQS. IDD
values must be met with all combinations of EMRS bits 10 and 11.
5. Definitions for IDD
L is defined as VIN
≤
VIL (AC) (max.)
H is defined as VIN
≥
VIH (AC) (min.)
STABLE is defined as inputs stable at an H or L level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between H and L every other clock cycle (once per two clocks) for address and control
signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals
not including masks or strobes.
6. Refer to AC Timing for IDD Test Conditions.
AC Timing for IDD Test Conditions
For purposes of IDD testing, the following parameters are to be utilized.
DDR2-667
Parameter
CL (IDD)
tRCD (IDD)
tRC (IDD)
tRRD (IDD)
tCK (IDD)
tRAS (min.)(IDD)
tRAS (max.)(IDD)
tRP (IDD)
tRFC (IDD)
5-5-5
5
15
60
7.5
3
45
70000
15
105
DDR2-533
4-4-4
4
15
60
7.5
3.75
45
70000
15
105
Unit
tCK
ns
ns
ns
ns
ns
ns
ns
ns
Preliminary Data Sheet E0919E10 (Ver. 1.0)
12
ELPIDA [ ELPIDA MEMORY ]
