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EBJ21UE8BFU0-GN-F 参数 Datasheet PDF下载

EBJ21UE8BFU0-GN-F图片预览
型号: EBJ21UE8BFU0-GN-F
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB DDR3 SDRAM SO- DIMM [2GB DDR3 SDRAM SO-DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 16 页 / 247 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBJ21UE8BFU0  
Pin Functions  
CK, /CK (input pins)  
CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the  
positive edge of CK and negative edge of /CK. Output (read) data is referenced to the crossings of CK and /CK  
(both directions of crossing).  
/CS (input pins)  
All commands are masked when /CS is registered high. /CS provides for external rank selection on systems with  
multiple ranks. /CS is considered part of the command code.  
/RAS, /CAS, and /WE (input pins)  
/RAS, /CAS and /WE (along with /CS) define the command being entered.  
A0 to A13 (input pins)  
Provided the row address for active commands and the column address for read/write commands to select one  
location out of the memory array in the respective bank. (A10(AP) and A12(/BC) have additional functions, see  
below) The address inputs also provide the op-code during mode register set commands.  
[Address Pins Table]  
Address (A0 to A13)  
Notes  
Row address (RA)  
AX0 to AX13  
Column address (CA)  
AY0 to AY9  
A10(AP) (input pin)  
A10 is sampled during read/write commands to determine whether auto-precharge should be performed to the  
accessed bank after the read/write operation. (high: auto-precharge; low: no auto-precharge)  
A10 is sampled during a precharge command to determine whether the precharge applies to one bank (A10 = low)  
or all banks (A10 = high). If only one bank is to be precharged, the bank is selected by bank addresses (BA).  
A12 (/BC) (input pin)  
A12 is sampled during read and write commands to determine if burst chop (on-the-fly) will be performed.  
(A12 = high: no burst chop, A12 = low: burst chopped.)  
BA0 to BA2 (input pins)  
BA0, BA1 and BA2 define to which bank an active, read, write or precharge command is being applied. BA0 and  
BA1 also determine if a mode register is to be accessed during a MRS cycle.  
[Bank Select Signal Table]  
BA0  
L
BA1  
L
BA2  
L
Bank 0  
Bank 1  
H
L
L
L
Bank 2  
H
H
L
L
Bank 3  
H
L
L
Bank 4  
H
H
H
H
Bank 5  
H
L
L
Bank 6  
H
H
Bank 7  
H
Remark: H: VIH. L: VIL.  
Data Sheet E1642E30 (Ver. 3.0)  
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