EBJ21UE8BFU0
Electrical Specifications
•
All voltages are referenced to VSS (GND).
Absolute Maximum Ratings
Parameter
Power supply voltage
Input voltage
Output voltage
Reference voltage
Reference voltage for DQ
Storage temperature
Power dissipation
Short circuit output current
Symbol
VDD
VIN
VOUT
VREFCA
VREFDQ
Tstg
PD
IOUT
Value
−0.4
to +1.975
−0.4
to +1.975
−0.4
to +1.975
−0.4
to 0.6
×
VDD
−0.4
to 0.6
×
VDDQ
−55
to +100
8
50
Unit
V
V
V
V
V
°C
W
mA
1, 4
Notes
1, 3, 4
1, 4
1, 4
3, 4
3, 4
1, 2, 4
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than
0.6
×
VDDQ, When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
4. DDR3 SDRAM component specification.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Operating case temperature
Symbol
TC
Rating
0 to +95
Unit
°C
Notes
1, 2, 3
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be
supported. During operation, the DRAM case temperature must be maintained between 0°C to +85°C
under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between +85°C
and +95°C case temperature. Full specifications are guaranteed in this range, but the following additional
conditions apply:
a)
Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to
3.9µs. (This double refresh requirement may not apply for some devices.)
b)
If Self-refresh operation is required in the Extended Temperature Range, then it is mandatory to
either use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 bit
[A6, A7] = [0, 1]) or enable the optional Auto Self-Refresh mode (MR2 bit [A6, A7] = [1, 0]).
Data Sheet E1642E30 (Ver. 3.0)
8
ELPIDA [ ELPIDA MEMORY ]
