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EDD1232ACBH-5B-F 参数 Datasheet PDF下载

EDD1232ACBH-5B-F图片预览
型号: EDD1232ACBH-5B-F
PDF下载: 下载PDF文件 查看货源
内容描述: 128M比特DDR SDRAM [128M bits DDR SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 51 页 / 633 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD1232ACBH  
CKE (input pin)  
This pin determines whether or not the next CK is valid. If CKE is high, the next CK rising edge is valid. If CKE is  
Low. CKE controls power down and self-refresh. The power down and the self-refresh commands are entered  
when the CKE is driven Low and exited when it resumes to high. CKE must be maintained high throughout read or  
write access.  
The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge  
and the /CK falling edge with proper setup time tIS, by the next CK rising edge CKE level must be kept with proper  
hold time tIH.  
DM0 to DM3 (input pin)  
DM is the reference signals of the data input mask function. DM is sampled at the cross point of DQS and VREF.  
When DM = high, the data input at the same timing are masked while the internal burst counter will be counting up.  
Each DM pin corresponds to eight DQ pins, respectively (See DQS and DM Correspondence Table).  
DQ0 to DQ31 (input/output pins)  
Data is input to and output from these pins.  
DQS0 to DQS3 (input and output pin): DQS0 to DQS3 provide the read data strobes (as output) and the write  
data strobes (as input). Each DQS pin corresponds to eight DQ pins, respectively (See DQS and DM  
Correspondence Table).  
[DQS and DM Correspondence Table]  
DQS  
Data mask  
DQs  
DQS0  
DQS1  
DQS2  
DQS3  
DM0  
DQ0 to DQ7  
DQ8 to DQ15  
DQ16 to DQ23  
DQ24 to DQ31  
DM1  
DM2  
DM3  
VDD, VSS, VDDQ, VSSQ (Power supply)  
VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output  
buffers.  
Data Sheet E1202E20 (Ver.2.0)  
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