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EDD1232ACBH-5B-F 参数 Datasheet PDF下载

EDD1232ACBH-5B-F图片预览
型号: EDD1232ACBH-5B-F
PDF下载: 下载PDF文件 查看货源
内容描述: 128M比特DDR SDRAM [128M bits DDR SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 51 页 / 633 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD1232ACBH
-5B
Parameter
Mode register set command cycle time
Active to Precharge command period
Active to Active/Auto refresh command period
Auto refresh to Active/Auto refresh command
period
Active to Read delay
Active to Write delay
Precharge to active command period
Active to Auto precharge delay
Active to active command period
Write recovery time
Auto precharge write recovery and precharge
time
Internal write to Read command delay
Average periodic refresh interval
Symbol
tMRD
tRAS
tRC
tRFC
tRCDRD
tRCDWR
tRP
tRAP
tRRD
tWR
tDAL
tWTR
tREFI
min.
2
40
55
60
15
10
15
tRCDRD min.
10
15
RU (tWR/tCK) +
RU (tRP/tCK)
2
max.
120000
7.8
Unit
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
tCK
tCK
µs
Notes
Notes: 1. On all AC measurements, we assume the test conditions shown in the next page. For timing parameter
definitions, see ‘Timing Waveforms’ section.
2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal
transition is defined to occur when the signal level crossing VTT.
3. The timing reference level is VTT.
4. Output valid window is defined to be the period between two successive transition of data out or DQS
(read) signals. The signal transition is defined to occur when the signal level crossing VTT.
5. tHZ is defined as DOUT transition delay from Low-Z to High-Z at the end of read burst operation. The
timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage
level, but specify when the device output stops driving.
6. tLZ is defined as DOUT transition delay from High-Z to Low-Z at the beginning of read operation. This
parameter is not referred to a specific DOUT voltage level, but specify when the device output begins
driving.
7. Input valid windows is defined to be the period between two successive transition of data input or DQS
(write) signals. The signal transition is defined to occur when the signal level crossing VREF.
8. The timing reference level is VREF.
9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A specific
reference voltage to judge this transition is not given.
10. tCK (max.) is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is not
assured.
11. tCK = tCK (min) when these parameters are measured. Otherwise, absolute minimum values of these
values are 10% of tCK.
12. VDD is assumed to be 2.5V
−0.125V/+0.2V.
VDD power supply variation per cycle expected to be less
than 0.4V/400 cycle.
Data Sheet E1202E20 (Ver.2.0)
8