EDD5108AGTA-4, EDD5116AGTA-4
DC Characteristics 1 (TA = 0°C to +70°C, VDD, VDDQ = 2.5V ± 0.125V, VSS, VSSQ = 0V)
max.
Parameter
Operating current (ACT-PRE)
Operating current
(ACT-READ-PRE)
Idle power down standby current
Floating idle standby current
Quiet idle standby current
Active power down standby current
Active standby current
Operating current
(Burst read operation)
Operating current
(Burst write operation)
Auto-refresh current
Self-refresh current
Operating current
(4 banks interleaving)
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7A
Grade
×
8
125
150
5
25
25
40
70
185
185
220
5
350
×
16
125
150
5
25
25
40
70
185
185
220
5
350
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Test condition
Notes
CKE
≥
VIH,
1, 2, 9
tRC = tRC (min.)
CKE
≥
VIH, BL = 4,CL = 3,
1, 2, 5
tRC = tRC (min.)
CKE
≤
VIL
CKE
≥
VIH, /CS
≥
VIH
DQ, DQS, DM = VREF
CKE
≥
VIH, /CS
≥
VIH
DQ, DQS, DM = VREF
CKE
≤
VIL
CKE
≥
VIH, /CS
≥
VIH
tRAS = tRAS (max.)
CKE
≥
VIH, BL = 2,
CL = 3
CKE
≥
VIH, BL = 2,
CL = 3
tRFC = tRFC (min.),
Input
≤
VIL or
≥
VIH
Input
≥
VDD – 0.2 V
Input
≤
0.2 V
BL = 4
4
4, 5
4, 10
3
3, 5, 6
1, 2, 5, 6
1, 2, 5, 6
1, 5, 6, 7
Notes: 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one clock cycle.
6. DQ, DM and DQS transition twice per one clock cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycle.
10. Command/Address stable at
≥
VIH or
≤
VIL.
DC Characteristics 2 (TA = 0°C to +70°C, VDD, VDDQ = 2.5V ± 0.125V, VSS, VSSQ = 0V)
Parameter
Input leakage current
Output leakage current
Output high current
Output low current
Symbol
ILI
ILO
IOH
IOL
min.
–2
–5
–15.2
15.2
max.
2
5
—
—
Unit
µA
µA
mA
mA
Test condition
VDD
≥
VIN
≥
VSS
VDDQ
≥
VOUT
≥
VSS
VOUT = 1.95V
VOUT = 0.35V
Notes
Data Sheet E1195E20 (Ver. 2.0)
6
ELPIDA [ ELPIDA MEMORY ]
