PRELIMINARY DATA SHEET
128M bits SDRAM
WTR (Wide Temperature Range)
EDS12322GBH-TT (4M words
×
32 bits)
Specifications
•
Density: 128M bits
•
Organization
1M words
×
32 bits
×
4 banks
•
Package: 90-ball FBGA
Lead-free (RoHS compliant) and Halogen-free
•
Power supply: VDD, VDDQ
=
1.8V
±
0.1V
•
Clock frequency: 166MHz/133MHz (max.)
•
1KB page size
Row address: A0 to A11
Column address: A0 to A7
•
Four internal banks for concurrent operation
•
Interface: LVCMOS
•
Burst lengths (BL): 1, 2, 4, 8, full page
•
Burst type (BT):
Sequential (1, 2, 4, 8, full page)
Interleave (1, 2, 4, 8)
•
/CAS Latency (CL): 3
•
Precharge: auto precharge option for each burst
access
•
Driver strength: half, quarter
•
Refresh: auto-refresh, self-refresh
•
Refresh cycles: 4096 refresh cycles/64ms
•
Operating ambient temperature range
TA = –20°C to +85°C
Features
• ×32
organization
•
Single pulsed /RAS
•
Burst read/write operation and burst read/single write
operation capability
•
Byte control by DQM
•
Wide temperature range
TA = –20°C to +85°C
Ordering Information
Part number
EDS12322GBH-6DTT-F
EDS12322GBH-7BTT-F
Organization
(words
×
bits)
4M
×
32
Internal Banks
4
Clock frequency
MHz (max.)
166
133
/CAS latency
3
Package
90-ball FBGA
Document No. E1347E20 (Ver. 2.0)
Date Published December 2008 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2008
ELPIDA [ ELPIDA MEMORY ]
