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EDS2532EEBH-9A 参数 Datasheet PDF下载

EDS2532EEBH-9A图片预览
型号: EDS2532EEBH-9A
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM (8M字× 32位)的 [256M bits SDRAM (8M words x 32 bits)]
分类和应用: 动态存储器
文件页数/大小: 50 页 / 700 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS2532EEBH-9A
DC Characteristics 2 (TA = 0°C to +70°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V)
Parameter
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Symbol
ILI
ILO
VOH
VOL
min.
–1
–1.5
VDD –0.2
max.
1
1.5
0.2
Unit
µA
µA
V
V
Test condition
0
VIN
VDD
0
VOUT
VDD, DQ = disable
IOH = –0.1 mA
IOL = 0.1 mA
1
1
Notes
Note: 1. Driver strength is Half condition.
Pin Capacitance (TA = 25°C, VDD, VDDQ = 1.8V ± 0.1V)
Parameter
Input capacitance
Symbol
CI1
CI2
Data input/output
capacitance
CI/O
Pins
CLK
min.
2.0
typ.
max.
3.5
3.5
5.5
Unit
pF
pF
pF
Notes
1, 2, 4
1, 2, 4
1, 2, 3, 4
Address, CKE, /CS,
/RAS, /CAS, /WE, 2.0
DQM
DQ
3.0
Notes: 1.
2.
3.
4.
Capacitance measured with Boonton Meter or effective capacitance measuring method.
Measurement condition: f = 1MHz, 0.5
×
VDDQ, 200mV swing.
DQM = VIH to disable DOUT.
This parameter is sampled and not 100% tested.
Preliminary Data Sheet E0617E40 (Ver. 4.0)
6