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EDS2532CABJ-75-E 参数 Datasheet PDF下载

EDS2532CABJ-75-E图片预览
型号: EDS2532CABJ-75-E
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM [256M bits SDRAM]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 48 页 / 637 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS2532CABJ
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up, execute power up sequence and initialization sequence before proper device operation is achieved
(refer to the Power up sequence).
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit output current
Power dissipation
Operating temperature
Symbol
VT
VDD
IOS
PD
TA
Tstg
Rating
–0.5 to +3.6
–0.5 to +3.6
50
1.0
0 to +70
–55 to +125
Unit
V
V
mA
W
°C
°C
Note
EO
Storage temperature
Parameter
Supply voltage
Input high voltage
Input low voltage
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (TA = 0 to +70°C)
Symbol
VDD, VDDQ
min.
2.3
0
1.7
–0.3
max.
2.7
0
VDD + 0.3
0.7
Unit
V
V
V
V
Notes
1
2
3
4
L
VSS, VSSQ
VIH
VIL
Notes: 1.
2.
3.
4.
The supply voltage with all VDD and VDDQ pins must be on the same level.
The supply voltage with all VSS and VSSQ pins must be on the same level.
VIH (max.) = VDD + 1.5V (pulse width
5ns).
VIL (min.) = VSS – 1.5V (pulse width
5ns).
od
Pr
t
uc
4
Data Sheet E0460E40 (Ver. 4.0)