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EDS2532CABJ-75-E 参数 Datasheet PDF下载

EDS2532CABJ-75-E图片预览
型号: EDS2532CABJ-75-E
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM [256M bits SDRAM]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 48 页 / 637 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS2532CABJ
DC Characteristics 1 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
Parameter
/CAS latency
Operating current
Standby current in power down
Standby current in power down
(input signal stable)
Standby current in non power
down
Standby current in non power
down (input signal stable)
Active standby current in power
down
Active standby current in power
down (input signal stable)
Active standby current in non
power down
Active standby current in non
power down (input signal stable)
Burst operating current
Refresh current
Symbol
IDD1
IDD2P
IDD2PS
IDD2N
IDD2NS
IDD3P
IDD3PS
IDD3N
IDD3NS
IDD4
IDD5
-75
-1A
-75
-1A
Grade
max.
125
3
2
20
9
4
3
50
30
155
125
265
255
3
-XXL
1
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Test condition
Burst length = 1
tRC = tRC (min.)
CKE = VIL,
tCK = tCK (min.)
CKE = VIL, tCK =
CKE, /CS = VIH,
tCK = tCK (min.)
CKE = VIH, tCK =
∞,
/CS = VIH
CKE = VIL,
tCK = tCK (min.)
CKE = VIL, tCK =
CKE, /CS = VIH,
tCK = tCK (min.)
CKE = VIH, tCK =
∞,
/CS = VIH
tCK = tCK (min.),
BL = 4
tRC = tRC (min.)
VIH
VDD – 0.2V
VIL
0.2V
VIH
VDD – 0.2V
VIL
0.2V
Notes
1, 2, 3
6
7
4
8
1, 2, 6
2, 7
1, 2, 4
2, 8
1, 2, 5
3
EO
Self refresh current
Self refresh current
(L-version)
Data Sheet E0460E40 (Ver. 4.0)
Notes: 1. IDD depends on output load condition when the device is selected. IDD (max.) is specified at the output
open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CLK operating current.
7. After power down mode, no CLK operating current.
8. Input signals are VIH or VIL fixed.
L
IDD6
IDD6
od
Pr
5
t
uc