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EDS2532EGBH-7BTT-F 参数 Datasheet PDF下载

EDS2532EGBH-7BTT-F图片预览
型号: EDS2532EGBH-7BTT-F
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM WTR (宽温度范围) [256M bits SDRAM WTR (Wide Temperature Range)]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 50 页 / 719 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS2532EGBH-TT
AC Characteristics (TA = –20°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V)
-6D
Parameter
System clock cycle time
CLK high pulse width
CLK low pulse width
Access time from CLK
Data-out hold time
CLK to Data-out low impedance
CLK to Data-out high impedance
Input setup time
Input hold time
Ref/Active to Ref/Active command period
Active to Precharge command period
Active command to column command
(same bank)
Precharge to active command period
Write recovery or data-in to precharge
lead time
Last data into active latency
Active (a) to Active (b) command period
Transition time (rise and fall)
Refresh period
(4096 refresh cycles)
Symbol
tCK
tCH
tCL
tAC
tOH
tLZ
tHZ
tSI
tHI
tRC
tRAS
tRCD
tRP
tDPL
tDAL
tRRD
tT
tREF
min.
6
2.5
2.5
2.5
0
1.5
0.8
60
42
18
18
15
2CLK +
tRP
12
0.5
max.
5.4
5.4
120000
1.0
64
-7B
min.
7.5
2.5
2.5
2.5
0
1.5
0.8
66
42
22.5
22.5
15
2CLK +
tRP
15
0.5
max.
5.4
5.4
120000
1.0
64
ns
ns
ms
1
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1, 5
1, 5
1, 2, 5
1, 2, 5
1, 2, 3, 5
1, 4
1, 5
1, 5
1
1
1
1
1
Notes: 1.
2.
3.
4.
5.
AC measurement assumes tT = 0.5ns. Reference level for timing of input signals is 0.5
×
VDDQ.
Access time is measured at 0.5
×
VDDQ. Load condition is CL = 30pF.
tLZ (min.) defines the time at which the outputs achieves the low impedance state.
tHZ (max.) defines the time at which the outputs achieves the high impedance state.
If tT
1ns, each parameters is changed as follows;
tAC, tOH, tLZ: should be added (tT (rise)/2 – 0.5)
tCH, tCL, tSI, tHI: should be added {(tT (rise) + tT (fall))/2 – 1}
Preliminary Data Sheet E1200E40 (Ver. 4.0)
7