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EDS5104ABTA-7A 参数 Datasheet PDF下载

EDS5104ABTA-7A图片预览
型号: EDS5104ABTA-7A
PDF下载: 下载PDF文件 查看货源
内容描述: 512M位的SDRAM [512M bits SDRAM]
分类和应用: 动态存储器
文件页数/大小: 52 页 / 558 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS5104ABTA, EDS5108ABTA, EDS5116ABTA
DC Characteristics 1 (TA = 0 to +70°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V)
°
Parameter
/CAS latency
Operating current
Standby current in power
down
Standby current in power
down (input signal stable)
Standby current in non
power down
Standby current in non
power down (input signal
stable)
Active standby current in
power down
Active standby current in
power down (input signal
stable)
Active standby current in
non power down
Active standby current in
non power down (input
signal stable)
Burst operating current
Refresh current
Self refresh current
Symbol
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
ICC4
ICC5
ICC6
-6B
-7A, -75
-6B,-7A
-75
Grade
-6B,-7A
-75
max.
×
4
160
140
3
2
-6B
30
-7A, -75 25
9
4
3
-6B
45
-7A, -75 40
20
160
130
320
280
4
×
8
165
145
3
2
30
25
9
4
3
45
40
20
170
140
320
280
4
×
16
175
155
3
2
30
25
9
4
3
45
40
20
190
160
320
280
4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Test condition
Burst length = 1
tRC = tRC (min.)
CKE = VIL,
tCK = tCK (min.)
CKE = VIL, tCK =
CKE, /CS = VIH,
tCK = tCK (min.)
CKE = VIH, tCK =
∞,
/CS = VIH
CKE = VIL,
tCK = tCK (min.)
CKE = VIL, tCK =
CKE, /CS = VIH,
tCK = tCK (min.)
CKE = VIH, tCK =
∞,
/CS = VIH
Notes
1, 2, 3
6
7
4
8
1, 2, 6
2, 7
1, 2, 4
2, 8
tCK = tCK (min.), BL = 4 1, 2, 5
tRC = tRC (min.)
VIH
VDD
– 0.2V
VIL
0.2V
3
Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output
open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CLK operating current.
7. After power down mode, no CLK operating current.
8. Input signals are VIH or VIL fixed.
DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V)
°
Parameter
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Symbol
ILI
ILO
VOH
VOL
min.
–1
–1.5
2.4
max.
1
1.5
0.4
Unit
µA
µA
V
V
Test condition
0
VIN
VDD
0
VOUT
VDD, DQ = disable
IOH = –4 mA
IOL = 4 mA
Notes
Preliminary Data Sheet E0250E10 (Ver. 1.0)
5