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HM5113165FTD-6 参数 Datasheet PDF下载

HM5113165FTD-6图片预览
型号: HM5113165FTD-6
PDF下载: 下载PDF文件 查看货源
内容描述: 128M EDO DRAM ( 8 Mword × 16位) 4K的刷新 [128M EDO DRAM (8-Mword × 16-bit) 4k refresh]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 27 页 / 248 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM5113165FTD-6
Read Cycle
HM5113165F
-6
Parameter
Symbol
t
RAC
t
CAC
t
AA
t
OEA
t
RCS
t
RCH
t
RCHR
t
RRH
t
RAL
t
CAL
t
CLZ
Min
0
0
60
0
30
18
0
3
3
Max
60
15
30
15
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
13, 21
13
5
21
13, 21
13
21
12
Notes
8, 9
9, 10, 17
9, 11, 17
9
23
12, 23
EO
Access time from
OE
WE
to Din delay time
8
Access time from
RAS
Access time from
CAS
Access time from address
Read command setup time
Read command hold time to
CAS
Read command hold time from
RAS
Read command hold time to
RAS
Column address to
RAS
lead time
Column address to
CAS
lead time
CAS
to output in low-Z
Output data hold time
Output data hold time from
OE
Output buffer turn-off time
Output buffer turn-off to
OE
CAS
to Din delay time
Output data hold time from
RAS
Output buffer turn-off to
RAS
Output buffer turn-off to
WE
RAS
to Din delay time
L
od
Pr
t
OH
t
OHO
t
OFF
15
t
OEZ
15
t
CDD
15
3
t
OHR
t
OFR
15
t
WEZ
15
t
WED
15
15
t
RDD
Data Sheet E0177H10
t
uc