HM5118165 Series
EO
Parameter
Standby current*
1
Input leakage current
Output high voltage
Output low voltage
Parameter
DC Characteristics
(Ta = 0 to +70°C, V
CC
= 5 V ± 10%, V
SS
= 0 V) (cont.)
HM5118165
-5
Symbol
I
CC3
I
CC5
-6
-7
Test conditions
t
RC
= min
RAS
= V
IH
,
UCAS, LCAS
= V
IL
Dout = enable
t
RC
= min
t
HPC
= min
CMOS interface
Dout = High-Z
CBR refresh: t
RC
= 125
µs
t
RAS
≤
0.3 µs
CMOS interface
RAS, UCAS, LCAS
≤
0.2
V
Dout = High-Z
0 V
≤
Vin
≤
7 V
0 V
≤
Vout
≤
7 V
Dout = disable
High Iout = –2 mA
Low Iout = 2 mA
Min Max Min Max Min Max Unit
—
—
200 —
5
—
170 —
5
—
150 mA
5
mA
RAS-only
refresh current*
2
CAS-before-RAS
refresh
current
EDO page mode current*
1,
*
3
I
CC7
Battery backup current*
4
(Standby with CBR refresh)
(L-version)
Self refresh mode current
(L-version)
Output leakage current
Notes: 1. I
CC
depends on output load condition when the device is selected. I
CC
max is specified at the output
open condition.
2. Address can be changed once or less while
RAS
= V
IL
.
3. Address can be changed once or less while
UCAS
and
LCAS
= V
IH
.
4. V
IH
≥
V
CC
– 0.2 V, 0 V
≤
V
IL
≤
0.2 V.
Capacitance
(Ta = 25°C, V
CC
= 5 V ± 10%)
Symbol
C
I1
C
I2
C
I/O
Input capacitance (Address)
Input capacitance (Clocks)
Output capacitance (Data-in, Data-out)
Notes : 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2.
RAS, UCAS
and
LCAS
= V
IH
to disable Dout.
LP
I
CC6
—
—
—
I
CC10
I
CC11
—
I
LI
I
LO
V
OH
V
OL
2.4
0
190 —
185 —
500 —
170 —
165 —
500 —
150 mA
145 mA
500 µA
300 —
300 —
300 µA
–10 10
–10 10
Data Sheet E0154H10
7
ro
–10 10
–10 10
V
CC
2.4
0.4
0
0.4
—
—
—
–10 10
–10 10
V
CC
0.4
µA
µA
V
V
V
CC
2.4
0
du
Typ
Max
5
7
7
Unit
pF
pF
pF
Notes
1
1
1, 2
ct
ELPIDA [ ELPIDA MEMORY ]
