HM5164165F Series, HM5165165F Series
AC Characteristics
(Ta = 0 to +70°C, V
CC
= 3.3 V ± 0.3 V, V
SS
= 0 V)*
1,
*
2,
*
19,
*
26
Test Conditions
•
•
•
•
•
Input rise and fall time: 2 ns
Input pulse levels: V
IL
= 0 V, V
IH
= 3.0 V
Input timing reference levels: 0.8 V, 2.0 V
Output timing reference levels: 0.8 V, 2.0 V
Output load: 1 TTL gate + C
L
(100 pF) (Including scope and jig)
EO
Parameter
RAS
precharge time
CAS
precharge time
RAS
pulse width
CAS
pulse width
RAS
hold time
CAS
hold time
OE
to Din delay time
12
Read, Write, Read-Modify-Write and Refresh Cycles
(Common parameters)
HM5164165F/HM5165165F
-5
Symbol
t
RC
t
RP
t
CP
Min
84
30
8
Max
—
—
-6
Min
104
40
Max
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
27
27
3
4
30
Notes
Random read or write cycle time
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS
to
CAS
delay time
RAS
to column address delay time
CAS
to
RAS
precharge time
OE
delay time from Din
CAS
delay time from Din
Transition time (rise and fall)
L
od
Pr
—
10
t
RAS
t
CAS
t
ASR
50
8
0
8
0
8
10000
60
10
10000
—
—
—
—
0
—
t
RAH
10
0
—
—
—
t
ASC
t
CAH
10
14
12
15
40
t
RCD
t
RAD
t
RSH
t
CSH
12
10
13
38
5
13
0
0
2
37
25
—
—
45
30
—
—
—
—
—
—
t
CRP
t
OED
t
DZO
t
DZC
t
T
—
—
—
—
50
5
15
0
0
2
50
Data Sheet E0099H10
10000
10000
t
uc
28
5
ns
ns
ns
ns
6
6
7
ELPIDA [ ELPIDA MEMORY ]
