HM5164165F Series, HM5165165F Series
DC Characteristics
(HM5164165F Series)
HM5164165F
-5
Parameter
Symbol Min
I
CC1
I
CC2
—
—
Max
120
2
-6
Min
—
—
Max
110
2
Unit
mA
mA
Test conditions
t
RC
= min
TTL interface
RAS, UCAS, LCAS
= V
IH
Dout = High-Z
CMOS interface
RAS, UCAS,
LCAS
≥
V
CC
– 0.2 V
Dout = High-Z
CMOS interface
RAS, UCAS,
LCAS
≥
V
CC
– 0.2 V
Dout = High-Z
t
RC
= min
RAS
= V
IH
UCAS, LCAS
= V
IL
Dout = enable
t
RC
= min
EO
Standby current
Standby current
(L-version)
Standby current*
1
Input leakage current
Output high voltage
Output low voltage
Operating current*
1,
*
2
—
0.5
—
0.5
mA
RAS-only
refresh current*
2
CAS-before-RAS
refresh
current
EDO page mode current*
1,
*
3
Battery backup current*
4
(Standby with CBR refresh)
(L-version)
Self refresh mode current
(L-version)
Output leakage current
Notes: 1. I
CC
depends on output load condition when the device is selected. I
CC
max is specified at the output
open condition.
2. Address can be changed once or less while
RAS
= V
IL
.
3. Measured with one sequential address change per EDO cycle, t
HPC
.
4. V
IH
≥
V
CC
– 0.2 V, 0 V
≤
V
IL
≤
0.2 V.
L
I
CC2
I
CC3
I
CC5
I
CC6
I
CC7
I
CC10
I
CC11
I
LI
I
LO
V
OH
V
OL
—
300
—
300
µA
—
—
120
5
—
—
110
5
mA
mA
od
Pr
—
—
—
120
120
1.2
—
—
—
110
110
1.2
mA
mA
mA
—
500
—
500
µA
–5
–5
2.4
0
5
5
V
CC
0.4
–5
–5
2.4
0
5
5
V
CC
0.4
µA
µA
V
V
Data Sheet E0099H10
RAS
= V
IL
,
CAS
cycle,
t
HPC
= t
HPC
min
CMOS interface
Dout = High-Z
CBR refresh: t
RC
= 15.6 µs
t
RAS
≤
0.3 µs
CMOS interface
RAS, UCAS, LCAS
≤
0.2 V
Dout = High-Z
0 V
≤
Vin
≤
V
CC
+ 0.3 V
t
uc
0 V
≤
Vout
≤
V
CC
Dout = disable
High Iout = –2 mA
Low Iout = 2 mA
9
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